发明名称 POLISHING PAD, CHEMOMECHANICAL POLISHING METHOD, AND HCEMOMECHANICAL POLISHING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a polishing pad which can improve the uniformity of polishing and can stabilize the production by supplying polishing slurry for a central part of a wafer to be polished sufficiently in polishing wafer. SOLUTION: This chemomechanical polishing device has a polishing pad 2 formed by blending a particulate abrasive into a basic material, a polishing plate 3 in which the polishing pad 2 is bonded on a surface thereof, a carrier 5 holding a substrate 4 to be treated, and an aqueous or alkaline solution supply device 13 which supplies an aqueous or alkaline solution 14 to a central part on the polishing pad 2. Here, the particulate abrasive such as abrasive composed of abrasive grains singly, abrasive having a structure in which abrasive slurry in which abrasive grains are dispersed in an aqueous or alkaline solution is wrapped by an organic compound, abrasive having a structure in which only a part around abrasive slurry in which abrasive particles are dispersed in an aqueous or alkaline solution is dried and solidified, or abrasive having a structure in which only a part around abrasive slurry in which abrasive grains are dispersed in an aqueous or alkaline solution is dried and solidified which has a thin and long shape can be used.
申请公布号 JPH11151659(A) 申请公布日期 1999.06.08
申请号 JP19970319853 申请日期 1997.11.20
申请人 SONY CORP 发明人 NAKAJIMA HIDEHARU
分类号 B24B37/20;B24B37/24 主分类号 B24B37/20
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