发明名称 SEMICONDUCTOR NONVOLATILE MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To increase the service life without increasing the number of processing bits by identifying the defective bits, which are detected by an error correction means are made defective to either 0 or 1, over-writing a correct value into the defective bits based on the result of the identification or erasing and conducting a rewriting. SOLUTION: Data are inputted to a parity encoder section 1 through a data bus 5 and the section 1 generates the signal, which detects the errors in the data, based on the inputted data. Then, the parity data are stored in a parity region of a memory section 8 through a parity bus 6 and the data are stored in a data region of the section 8 through an internal data bus 7. Note that these data are stored in same pairs. The section 1 generates parity data based on the inputted data, inputs the data into a comparing section 2 through a bus 9 to conduct the normal/defective condition discrimination of the data. For the case of defective bits, the value of the defective portion is reversed in order to rewrite a correct value and outputted.</p>
申请公布号 JPH11203892(A) 申请公布日期 1999.07.30
申请号 JP19980001598 申请日期 1998.01.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HORIKAWA NOBUKAZU
分类号 G11C16/06;G11C29/00;G11C29/42;(IPC1-7):G11C29/00 主分类号 G11C16/06
代理机构 代理人
主权项
地址