| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device correcting distortion developed by the expansion/contraction of a chip along a main face when a temperature changes and distortion developed by the change of the degree of the curvature of the chip. SOLUTION: A first layer 1a and a second layer 1b, consisting of materials different in the coefficients of thermal expansion, are stacked to constitute a heat sink 1. The coefficients of the thermal expansion of the first layer 1a and the second layer 1b are set to be values approximated to the coefficient of the thermal expansion of the laser chip 2, and the coefficient of the thermal expansion of the first laver 1a is made to be larger than that of the second layer 1b. The laser chip 2 consisting of the substrate 2b and the laser chip 2 is mounted on the first layer 1a of the heat sink 1 by making a semiconductor layer 2b-side face downward. |
