METHOD OF STRIPPING A PHOTORESIST IN A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for stripping a photoresist of a semiconductor device is provided to improve the reliability and the productivity of a semiconductor device by preventing pollution of a photoresist layer. CONSTITUTION: A method for stripping a photoresist of a semiconductor device comprises the following steps. A wafer is located on a wafer support plate of a reaction furnace after performing an ion injection process using a photoresist pattern as an ion injection mask. A carbonized layer of the photoresist pattern formed by the ion injection process is removed by using a low temperature oxygen plasma. The remaining part of the photoresist pattern is removed by using a high temperature oxygen plasma.