| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided which prevents the current leakage by blocking the loss of a field oxide, and assures the etch margin of the contact hole, a path through which a silicon substrate or a bottom interconnection line contacts with an upper interconnection line. CONSTITUTION: According to a method for forming a contact hole(c2) of a semiconductor device in a semiconductor integrated circuit process, a nitride film block of buffer layer for etch stop is formed on a field oxide(2), by depositing and patterning a nitride film(4) on a semiconductor substrate where a field oxide as a semiconductor device including a gate(3) and a source/drain(5) and an isolation region. Then, a PMD(Poly-Metal-Dielectric) oxide film(14) is deposited, and a photoresist pattern(15) for forming the contact hole is formed by depositing and patterning a photoresist film on the PMD oxide film. the contact hole is formed by etching the PMD oxide film with the photoresist pattern as a mask. According to the method, the loss of the field oxide can be prevented because the oxide and the nitride film block having an etch selectivity are formed on the field oxide even though a misalign of the photoresist pattern is occurred. Therefore, the leakage current of a diode can be prevented. Also, the contact resistance characteristics can be improved by reducing the creation of polymer according to the etching of the nitride film because the contact hole can be formed only by etching the PMD oxide film in forming the contact hole.
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