| 摘要 |
A semiconductor device includes a first region formed with a first gate insulator and operated by a first operating voltage, a second region formed with a second gate insulator made from a material having a higher dielectric constant than a material of the first insulator, the second region being operated by a second operating voltage lower than the first operating voltage, and gate electrodes including at least lowest layers which are in contact with the first and second gate insulators and are formed together with element isolation regions by a self-alignment manner respectively.
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