| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide gold wires for semiconductor device connection having a high strength and high bonding properties. <P>SOLUTION: As the base in which praseodymium is contained in the range of no less than 0.0004 mass% and no more than 0.02 mass%, the metal wire for semiconductor device connection contains beryllium or aluminum, or both, in a limited range taking the bonding properties into consideration, and contains calcium, lanthanum, cerium, neodymium, and samarium in a limited range as auxiliary additive elements further taking into consideration the intermetallic compound generated in the metal wire. Due to this, compared to the case where other rare earth elements are used, it is made possible to improve the strength of the metal wire with a smaller amount of additives. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
