发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.
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申请公布号 |
US2006283380(A1) |
申请公布日期 |
2006.12.21 |
申请号 |
US20060398118 |
申请日期 |
2006.04.05 |
申请人 |
LEE SUN-GHIL;KIM YOUNG-PIL;SHIN YU-GYUN;LEE JONG-WOOK;LEE YOUNG-EUN |
发明人 |
LEE SUN-GHIL;KIM YOUNG-PIL;SHIN YU-GYUN;LEE JONG-WOOK;LEE YOUNG-EUN |
分类号 |
C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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