| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology capable of stably forming an interconnection shape without widening an occupied area of the interconnection region, and stabilizing a driving current flowing the interconnection. <P>SOLUTION: The semiconductor memory comprises a first and a second interconnection regions mutually adjacently arranged through a power wiring part. The first interconnection region has a first interconnection 10a of a first pitch, a first outgoing interconnection 12a of a second pitch wider than the first pitch, and a first inclined interconnection 11a for connecting the first interconnection 10a and the first outgoing interconnection 12a and extending in an oblique direction at a memory cell array part. The second interconnection region has a second interconnection 10b of a first pitch, a second outgoing interconnection 12b of the second pitch, and a second inclined interconnection 11b for connecting the second interconnection 10b and the second outgoing interconnection 12b and extending in an oblique direction at a memory cell array part. The first and the second inclined interconnection 11a, 11b extend to an identical direction. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
