发明名称 |
NON-VOLATILE, ELECTRICALLY-PROGRAMMABLE MEMORY |
摘要 |
A solid-state mass storage device is provided. The solid-state mass storage device defines a storage area adapted to store data; the storage area is adapted to be exploited for storing data with a first storage density at a first data transfer speed. The storage area includes at least a first storage area portion and a second storage area portion. The solid-state mass storage device further includes accessing logic adapted to exploit the first storage area portion for storing data with a second storage density at a second data transfer speed, and adapted to exploit the second storage area portion for storing data with a third storage density and a third data transfer speed. The second storage density is lower than the third storage density, which is in turn lower than or equal to the first storage density; the second data transfer speed is higher than the third data transfer speed, which is in turn higher than or equal to the first data transfer speed.
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申请公布号 |
US2008052458(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
US20070844465 |
申请日期 |
2007.08.24 |
申请人 |
STMICROELECTRONICS S.R.L.;HYNIX SEMICONDUCTOR INC |
发明人 |
MICHELONI RINO;RAVASIO ROBERTO |
分类号 |
G06F12/00 |
主分类号 |
G06F12/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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