发明名称 |
Semiconductor memory cell, method for fabricating it and semiconductor memory device |
摘要 |
A semiconductor memory cell, a method for fabricating it and a semiconductor memory device. A phase change material region of a storage element of the semiconductor memory cell has been or is formed as a lining region of a wall region of a contact recess which passes all the way through an insulation region between a first electrode device and a second electrode device. Furthermore, the space or region of the contact recess which is not taken up by the material region of the storage element has been or is made substantially electrically insulating.
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申请公布号 |
US7358520(B2) |
申请公布日期 |
2008.04.15 |
申请号 |
US20050075481 |
申请日期 |
2005.03.09 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
PINNOW CAY-UWE;UFERT KLAUS-DIETER |
分类号 |
H01L29/02;H01L21/8239;H01L27/10;H01L27/24;H01L29/792;H01L45/00;H01L47/00 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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