发明名称 Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device
摘要 A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.
申请公布号 US2009029509(A1) 申请公布日期 2009.01.29
申请号 US20080232433 申请日期 2008.09.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;OHTANI HISASHI;SHIMADA HIROYUKI;SAKAMA MITSUNORI;ABE HISASHI;TERAMOTO SATOSHI
分类号 H01L21/336;C23C16/54;H01L21/00 主分类号 H01L21/336
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