| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based high output compound semiconductor device which operates at a high voltage. SOLUTION: The compound semiconductor device is provided with a III-V nitride semiconductor layer comprising a channel region between a source region and a drain region, a first gate insulating film which is formed on the III-V nitride semiconductor layer by covering the channel region and comprises a metal oxide component, a second gate insulating film which is formed on the first gate insulating film and has an opening from which the gate insulating film is exposed in the channel region, a gate electrode which is formed on the second gate insulating film by covering a surface of the second gate insulating film and is brought into contact with the first gate insulating film in the opening, and source/drain electrodes which are formed on the III-V nitride semiconductor layer by being brought into ohmic-contact with the source/drain regions. COPYRIGHT: (C)2009,JPO&INPIT |
