| 摘要 |
A semiconductor device, a manufacturing method thereof, a driving method thereof, and a communication system are provided to efficiently correct radio frequency attenuation by generating a near-end crosstalk in a first transmission line through a second transmission line. A semiconductor device(300) includes a substrate(310), a semiconductor chip(320), a first transmission line(331), and a second transmission line(332). The semiconductor chip is mounted on the substrate. The semiconductor chip generates a first signal and a second signal. The first signal and the second signal have the same phase, progress speed, and wavelength. The first transmission line is connected to the semiconductor chip. The first transmission line receives the first signal from the semiconductor chip. The second transmission line is connected to the semiconductor chip. The second transmission line is formed on the substrate, and is parallel to the first transmission line. The second transmission line receives the second signal from the semiconductor chip. An end of the second transmission line is opened. The first transmission line and the second transmission line are micro strips, strip lines, and coaxial cables. |
