Pulsed line beam device processing systems using laser diodes

摘要

Pulsed laser beams provided by laser diodes or arrays of laser diodes are applied to substrates such as amorphous silicon. The optical beam is based on a plurality of beams from respective laser diodes and is shaped, homogenized, and directed to a substrate. Duty cycles of the laser diodes are selected to be less than about 0.2. Exposures are applied to Aft an amorphous silicon layer on a rigid or flexible substrate to produce a polysilicon layer with a mobility of at least 50 cm2/Vs.

主权项

1. A method, comprising:
selecting a substrate having an amorphous silicon layer; shaping a pulsed optical beam to form an optical line beam by combining constituent pulsed optical beams from a plurality of laser diodes, wherein wavelengths associated with the laser diodes are between 780 nm and 980 nm and at least two of the plurality of laser diodes have emission wavelengths that differ by at least 25 nm; and processing the amorphous silicon layer of the substrate by exposing the amorphous silicon layer to the optical line beam so as to produce a polysilicon layer, wherein an exposure area corresponds to the optical line beam cross-sectional area.