发明名称 |
Electric storage device management system, electric storage device pack, and method of estimating state of charge |
摘要 |
An electric storage device management system includes a voltage sensor, a memory, and a controller. The voltage sensor detects a voltage across an electric storage device having a correlation between an open circuit voltage (OCV) and a state of charge (SOC) including a slight change region and a sharp change region. The memory stores information on correlation between OCV and SOC in the sharp change region. The controller is configured to: determine an OCV based on a voltage detected by the voltage sensor; determine whether the defined OCV is within the sharp change region; determine an SOC corresponding to the defined OCV based on the stored information stored if the defined OCV is within the sharp change region; determine the determined SOC as an estimated SOC; and prohibit the determining of the SOC as an estimated SOC if the defined OCV is out of the sharp change region. |
申请公布号 |
US9429626(B2) |
申请公布日期 |
2016.08.30 |
申请号 |
US201313888213 |
申请日期 |
2013.05.06 |
申请人 |
GS Yuasa International Ltd. |
发明人 |
Shiraishi Takeyuki;Itagaki Takeshi |
分类号 |
G01N27/416;G01R31/36;H02J7/00;B60L11/18 |
主分类号 |
G01N27/416 |
代理机构 |
McGinn IP Law Group, PLLC |
代理人 |
McGinn IP Law Group, PLLC |
主权项 |
1. An electric storage device management system comprising:
a voltage sensor configured to detect a voltage across an electric storage device having a correlation between an open circuit voltage (OCV) and a state of charge (SOC), the correlation including a slight change region and a sharp change region, the slight change region being a region in which a variation in OCV relative to the SOC is equal to or smaller than a reference value, the sharp change region being a region in which the variation is larger than the reference value; a memory storing at least information on correlation between OCV and SOC in the sharp change region; and a controller configured to:
define an OCV of the electric storage device based on a voltage detected by the voltage sensor;determine whether the defined OCV is within the sharp change region;determine an SOC corresponding to the defined OCV based on the information stored in the memory if the defined OCV is within the sharp change region;determine the determined SOC corresponding to the defined OCV as an estimated SOC; andprohibit the determining of the SOC corresponding to the defined OCV as an estimated SOC if the defined OCV is out of the sharp change region. |
地址 |
Kyoto-shi, Kyoto JP |