Electrostatic discharge protection device and electrostatic discharge protection system

摘要

An ESD device disposed on a substrate is provided. The ESD device includes a first well, a second well, a first poly-silicon region, a second poly-silicon region and a first protection layer. The first well has a first conductive type and is disposed on the substrate. The second well has a second conductive type, is disposed on the substrate and is adjacent to the first well. The first poly-silicon region is disposed on the first well. The second poly-silicon region is disposed on the second well. The first protection layer covers portions of the first well, the second well, the first poly-silicon region and the second poly-silicon region. There is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region.

主权项

1. An electrostatic discharge protection device disposed on a substrate, comprising:
a first well, having a first conductive type and disposed on the substrate; a second well, having a second conductive type and disposed on the substrate, wherein the second well is adjacent to the first well, and the second conductive type is different from the first conductive type; a first poly-silicon region, disposed on the first well, wherein a first node connects to the first well through the first poly-silicon region; a second poly-silicon region, disposed on the second well, wherein a second node connects to the second well through the second poly-silicon region; and a first protection layer, disposed between the first poly-silicon region and the second poly-silicon region, wherein the first protection layer covers a portion of the first well, a portion of the second well, a portion of the first poly-silicon region and a portion of the second poly-silicon region, and there is no doping region in the portions of the first well and the second well which are covered by the first protection layer and between the first poly-silicon region and the second poly-silicon region.