发明名称 TERAHERTZ QUANTUM CASCADE LASER IMPLEMENTING A CERENKOV DIFFERENCE-FREQUENCY GENERATION SCHEME
摘要 A terahertz source implementing a {hacek over (C)}erenkov difference-frequency generation scheme in a quantum cascade laser. The laser includes an undoped or semi-insulating InP substrate with an exit facet that is polished at an angle between 10° to 40°. The laser further includes a first waveguide cladding layer(s) in contact with an active layer (arranged as a multiple quantum well structure) and a current extraction layer on top of the substrate. Furthermore, the laser includes a second waveguide cladding layer(s) on top of the active layer, where the first and second waveguide cladding layers are disposed to form a waveguide structure by which terahertz radiation generated in the active layer is guided inside the laser. The terahertz radiation is emitted into the substrate at a {hacek over (C)}erenkov angle relative to a direction of the nonlinear polarization wave in the active layer, and once in the substrate, propagates towards the exit facet.
申请公布号 US2016308331(A1) 申请公布日期 2016.10.20
申请号 US201313949379 申请日期 2013.07.24
申请人 Board of Regents, The University of Texas System 发明人 Belkin Mikhail;Adams Robert;Amann Markus Christian;Vizbaras Augustinas
分类号 H01S5/20;H01S5/343;H01S5/02;H01S5/34 主分类号 H01S5/20
代理机构 代理人
主权项 1. A terahertz quantum cascade laser comprising: a substrate, wherein an exit facet of said substrate is polished at an angle between 10° to 40°; a doped current extraction semiconductor layer positioned on said substrate; an active region layer positioned above said current extraction semiconductor layer, wherein said active region layer is arranged as a multiple quantum well structure, wherein said current extraction semiconductor layer is used for lateral current extraction from said active region layer; a metallic contact electrically connected to said current extraction semiconductor layer for current extraction from said active region layer; a first one or more waveguide cladding layers between said current extraction semiconductor layer and said action region layer; a second one or more waveguide cladding layer in contact with and above said active region layer, wherein said first and second one or more waveguide cladding layers are disposed to form a waveguide structure to guide mid-infrared light; and metal contact layers in contact with said second one or more waveguide cladding layers; wherein a propagation constant of a nonlinear polarization wave (knl), given by a difference between propagation constants of mid-infrared pumps in said waveguide structure, in said active region layer is smaller compared to a propagation constant of a terahertz radiation (kTHz) propagating in said substrate, wherein said terahertz radiation is emitted into said substrate at a {hacek over (C)}erenkov angle relative to a direction of said nonlinear polarization wave, wherein said terahertz radiation once in said substrate propagates towards said exit facet.
地址 Austin TX US