THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

主权项

1. A transistor array panel, comprising:
a light blocking layer; an oxide semiconductor disposed over the light blocking layer and including an oxide semiconductor material; a source region and a drain region positioned at two opposite sides with respect to the oxide semiconductor and positioned at a same layer as the oxide semiconductor; an insulating layer which is disposed over the oxide semiconductor; a gate electrode disposed over the insulating layer, the light blocking layer overlapping the gate electrode with the oxide semiconductor interposed between the gate electrode and the light blocking layer; a passivation layer disposed over the gate electrode; and a data input electrode and a data output electrode disposed over the passivation layer, wherein the data input electrode is connected to the source region, and the data output electrode is connected to the drain region, and a first layer is disposed over a surface of the source and drain region.