| 发明名称 |
METHOD FOR FORMING MANGANESE-CONTAINING FILM |
| 摘要 |
A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film. |
| 申请公布号 |
US2016326646(A1) |
申请公布日期 |
2016.11.10 |
| 申请号 |
US201615212774 |
申请日期 |
2016.07.18 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO Kenji;MAEKAWA Kaoru;HAMADA Tatsufumi;NAGAI Hiroyuki |
| 分类号 |
C23C16/455;C23C16/40;C23C14/14;C23C14/34;H01L21/768;C23C16/02;H01L21/02;H01L21/285;H01L21/3105;C23C16/18;C23C16/48 |
主分类号 |
C23C16/455 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a manganese-containing film to be formed on an underlayer, comprising:
reacting a manganese compound gas with oxygen supplied from the underlayer to form a manganese oxide film or a manganese silicate film on the underlayer; reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the manganese oxide film or on the manganese silicate film; and forming a copper film on the metal manganese film. |
| 地址 |
Tokyo JP |
