发明名称 |
Silicon-on-insulator (SOI) substrate and method for manufacturing the same |
摘要 |
A silicon-on-insulator (SOI) substrate includes a silicon substrate including an active region defined by a field region that surrounds the active region for device isolation. The field region includes a first oxygen-ion-injected isolation region and a second oxygen-ion-injected isolation region. The first oxygen-ion-injected isolation region has a first thickness and is disposed under the active region, a center of the first oxygen-ion-injected isolation region being at a first depth from a top surface of the silicon substrate. The second oxygen-ion-injected isolation region has a second thickness that is greater than the first thickness, the second oxygen-ion-injected isolation region disposed at sides of the active region and formed from a ton surface of the silicon substrate, a center of the second oxygen-ion-injected region disposed at a second depth from the top surface of the silicon substrate.
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申请公布号 |
US7064387(B2) |
申请公布日期 |
2006.06.20 |
申请号 |
US20040874403 |
申请日期 |
2004.06.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JANG TAE-HO |
分类号 |
H01L27/01;H01L27/12;H01L21/762;H01L21/84;H01L31/0392 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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