| 摘要 |
PURPOSE:To provide the film formation method which can form the thin film of hydrogenated amorphous silicon even on a plastic substrate, etc. CONSTITUTION:A film forming device provided with a vacuum chamber 1' into which hydrogen or a gaseous mixture composed of the hydrogen and argon is introduced, an evaporating source 4 which evaporates a material to be evaporated in this vacuum chamber, a counter electrode 10 which is disposed in the vacuum chamber and holds the substrate 11 so as to face the evaporating source 4, a grid 8 which has a spacing to allow the passage of the material to be evaporated disposed between the evaporating source and the counter electrode, a filament 6 for generating thermions which is disposed nearer the evaporating source side than the grid in the vacuum chamber and a power source means 14 which maintains the grid at the positive potential with respect to the potential of the filament is used in this film forming method. The film formation is executed by using the evaporating source 4 as an electron gun, setting the pressure of the introduced gases at 4/100 to 1/10Pa, using silicon as the material to be evaporated, and setting the impressed voltage of the grid at 100 to 400V, the filament voltage at 10 to 12V, speed at 0.4 to 2Angstrom Angstrom /sec. |
