PREPARATION OF SEMICONDUCTOR DEVICE FOR ELECTRIC POWER

摘要

PURPOSE: To improve in increasing a load current without damaging a power semiconductor device by a method wherein at least one flat surface of a first conductive semiconductor substrate is ground and a second conductive area is made starting with this surface. CONSTITUTION: This is a method for manufacturing a power semiconductor device having a semiconductor substrate having at least one flat surface and at least two areas of a first or second conductive type. In this method, at least one flat surfaces 2, 3 of a first conductive semiconductor substrate 1 are ground and a second conductive area 4 is made starting with this surface. A second conductive area 4 is made starting with the surface 2 ground by diffusion. The other surface 3 of the semiconductor substrate is also ground and further a third area is made by epitaxial growth starting with the other ground surface.