| 摘要 |
<p>PURPOSE:To reduce the level of wire-breaking defectiveness by a method wherein when forming the wiring of the first electrode, a protective layer for insulating substrate by a Ta film having a width larger than the wiring of the second electrode is left between the insulating substrate and the multilayer film so as to keep the insulation distance from the first electrode wiring. CONSTITUTION:When forming a gate wiring (the wiring of the first electrode) 3 by a wet etching, below a source wiring (the wiring of the second electrode) 8 to be formed later on, a protective layer for glass substrate (protective film for insulating substrate) 12 by a Ta film having a width larger than the source wiring 8 is left between a glass substrate 1 and a multilayer film 10 so as to keep the insulation distance from the gate 3. With this, the glass substrate 1 is not exposed to an etchant of the hydrofluoric acid system even in the place of the source wiring 8, so even if there is any defective part in the base coat, the probability of the substrate 1 being corroded becomes very low, and thus, the level of wire-breaking defectiveness of the second electrode wiring disposed over the first electrode wiring is reduced.</p> |
