发明名称 GAS DISPERSION BOARD FOR SEMICONDUCTOR WAFER TREATING DEVICEWITH ARCING PREVENTION MEANS
摘要 PURPOSE: To provide a gas distribution plate which can introduce gas sufficient for a plasma processing into a chamber, has openings which are not blocked and can suppress arcing despite of the type of plasma generated in the chamber. CONSTITUTION: The gas distribution plate 10 used for the semiconductor wafer process chamber has non-circular openings 14 which are formed for making gas pass through and are arranged in symmetrical patters. The length of the short shafts of the non-circular openings are at least longer than about 127μm (5 mils), about 254μm, most suitably, and shorter than about 762μm (30 mils), about 635μm (25 mils), most stability. The lengths of the long shafts are longer than the short shafts and they are longer than about 635μm (25 mils), most suitably. The most suitable lengths are about 762μm (30 mils). It is desirable that at least several walls of the non-circular openings are not vertical against the face of the gas distribution plate.
申请公布号 JPH0855840(A) 申请公布日期 1996.02.27
申请号 JP19950065917 申请日期 1995.03.24
申请人 APPLIED MATERIALS INC 发明人 YUU JIA SUU
分类号 H01L21/302;H01J37/32;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/302
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