发明名称 |
Thermal type infrared imaging device and fabrication method thereof |
摘要 |
A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
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申请公布号 |
US7067810(B2) |
申请公布日期 |
2006.06.27 |
申请号 |
US20030393259 |
申请日期 |
2003.03.21 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIGENAKA KEITARO;MASHIO NAOYA |
分类号 |
G01J1/02;H01L25/00;H01L27/14;H01L27/146;H01L31/028;H04N5/33;H04N5/335;H04N5/369 |
主分类号 |
G01J1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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