| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing semiconductor film whose pressure at a high temperature and high-voltage can be measured and which exhibits a high gauge factor. SOLUTION: Though the gauge factor G becomes larger as the doping concentration becomes low, the conductivityσtends to be low. When the doping concentration is 1% or more, the gauge factor G becomes small and there is no more merit as pressure-sensing resistive material. On the other hand, when the doping concentration is 0.01% or less, the conductivityσbecomes so low that the semiconductor thin film can hardly be used as a device. Therefore, phosphin flow rate: silane flow rate is in the range of 10<2> -10<4> . The semiconductor thin film needs to be crystallite and not amorphous to obtain a large gauge factor G. Silane flow rate: hydrogen flow rate is more than 1:80 to form crystallite silicon.
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