发明名称 SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To decrease the number of mount points on a substrate by forming a memory area of plural areas which are formed on the same silicon substrate and have different access times. SOLUTION: On the mount substrate 10, a CPU 11, a mixed memory 12, and other LSIs are mounted and the CPU 11 and mixed memory 12 are connected by an address bus 13 and a data bus 14. The CPU 11 reads a program such as an OS out of the mixed memory 12, and decodes and executes the program to control the whole operation of a game machine. The mixed memory 12 is composed of, for example, a mask ROM and has a high-speed memory area 15, an intermediate-speed memory area 16, and a low-speed memory area 17 formed on the same silicon substrate as the memory areas which have different operation speeds (access time). The high-speed memory area 15, intermediate- speed memory area 16, and low-speed memory area 17 are set to respective corresponding operation speeds by making, for example, their program system different.
申请公布号 JPH09212418(A) 申请公布日期 1997.08.15
申请号 JP19960015518 申请日期 1996.01.31
申请人 TOSHIBA CORP 发明人 OSHIMA TOSHIYUKI;FUJII OSAMU;WAKABAYASHI SHIGEMICHI
分类号 G06F12/06;G11C7/00;(IPC1-7):G06F12/06 主分类号 G06F12/06
代理机构 代理人
主权项
地址