| 发明名称 |
Semiconductor device and manufacturing method therefor |
| 摘要 |
A semiconductor device manufacturing method includes forming a wiring layer, and forming a first insulating film on the wiring layer under a condition that hydrogen in a plasma is 1% or less in all gas components.
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| 申请公布号 |
US7067380(B2) |
申请公布日期 |
2006.06.27 |
| 申请号 |
US20030635676 |
申请日期 |
2003.08.07 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUHARA JOTA;TSUNODA HIROAKI;SHIBA KATSUYASU |
| 分类号 |
H01L21/283;H01L21/336;H01L21/316;H01L21/768;H01L21/8246;H01L21/8247;H01L23/522;H01L27/105;H01L27/115;H01L29/788;H01L29/792;H01L43/08 |
主分类号 |
H01L21/283 |
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