发明名称 METHOD AND DEVICE FOR PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To detect a particle number with high sensitivity in real time with a simple mechanism by generating plasma in the upper part of a wafer in a chamber and detecting the existence of particles based on the size of an electron density or change. SOLUTION: In a plasma generation area 11, high frequencies are applied to a first and a second electrode 13 and 14 while generating a plasma, and a wafer on the second electrode 14 is processed. In this plasma processing device 10, through a quartz window 20, a microwave from a microwave oscillator 25 is transmitted to the plasma generation area. A phase differenceΔϕbetween before and after the transmission of the microwave is detected, and a plasma electron density Ne is calculated by an operation circuit 28 based on an expression: Ne=fΔϕ/0.842D (f is a microwave frequency, and D is a plasma width). If this electron density is smaller than a reference value, the existence of particles in the chamber is determined and required operations such as cleaning of the plasma generation area are performed.
申请公布号 JPH10326697(A) 申请公布日期 1998.12.08
申请号 JP19980078099 申请日期 1998.03.25
申请人 FUJITSU LTD 发明人 KAMATA TAKESHI;ARIMOTO HIROSHI
分类号 H05H1/00;C23C14/54;C23C16/50;C23C16/511;C23C16/515;C23F4/00;H01L21/205;H01L21/302;H01L21/3065;H05H1/46;(IPC1-7):H05H1/46;H01L21/306 主分类号 H05H1/00
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