| 摘要 |
PROBLEM TO BE SOLVED: To improve the output of an LED, LD by providing the structure of a new nitride semiconductor element. SOLUTION: A first nitride semiconductor layer 5 comprising a p-type impurity is formed on an active layer 4, and on the first nitride semiconductor layer l5, a second nitride semiconductor layer 6 which comprises less p-type impurities than the p-type impurity concentration of the first nitride semiconductor layer 5 is provided. Furthermore, on the second nitride semiconductor layer 6, a third nitride semiconductor layer 7 comprising a more p-type impurity than the p-type impurity concentration of the first nitride semiconductor layer 5 is provided. |
