发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To set a program unit freely by making the prescribed numbers as a specified page unit when a command specifying a program unit is included based on a decoded result by a command decoding means. SOLUTION: This memory is characterized in that a memory cell array 300 of the non-volatile semiconductor memory can be divided into each column of the prescribed numbers, the memory is made a page register 310 having capacity corresponding to a whole column address of a memory cell array, and the memory has a mask generating section 320 masking an unspecified part at the time of programming when page size is specified. Inputted command decoded by a command decoder 230, the decoded result is given to a control circuit 200, further a column decoder 130, a pointer 330, a row decoder 160, and a voltage generating circuit 240 are driven by the control circuit 200.</p>
申请公布号 JPH11154393(A) 申请公布日期 1999.06.08
申请号 JP19970319890 申请日期 1997.11.20
申请人 TOSHIBA CORP 发明人 TOKUSHIGE KAORU
分类号 G11C16/02;(IPC1-7):G11C16/02 主分类号 G11C16/02
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