| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric material, capacitor, memory and manufacture thereof whereby damage of the capacitor due to short circuit can be lessened by suppressing a leakage current low. SOLUTION: On a substrate 11 a lower electrode 13, ferroelecric film 14 and upper electrode 15 are layered through a bond layer 12. The ferroelectric film 14 is made of Srx Biy (Ta1-u Nbu )2 Tiz O9±d (0.6<=y<=1.2, 1.7<=y<=2.5, 0<=y<=1.0, 0.1<=z<=1.0, 0.0<=d<=1.0). To is contained a little to suppress increase of a leak current due to applied voltage, lessen short circuit and improve temp. characteristic. Dielectric polarization characteristic and fatigue characteristic can be held high.
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