| 摘要 |
The invention concerns a detector in the form of a field-effect transistor (13) arranged in a chamber (14). The transistor (13) electroattractive part is formed by a macromolecular material layer (4). The latter is exposed to a mixture containing at least one polluting gas, such as O3 and NO2, which causes it to be doped. A measuring device (10) comprises means for measuring the intensity of the current (IDS) which circulates between the transistor drain electrode (5) and source electrode (6) at least at one given time after the detector has been initialised, said at least polluting gas presence causing the layer (4) material to be doped depending on the concentration in polluting gas, the current (IDS)intensity and the intensity gradient being related to the concentration in polluting gas. |
