发明名称 |
Light emitting device and manufacturing method thereof |
摘要 |
In a light emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier. The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.
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申请公布号 |
US2008032430(A1) |
申请公布日期 |
2008.02.07 |
申请号 |
US20070896822 |
申请日期 |
2007.09.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MURAKAMI SATOSHI;MIYAGI NORIKO |
分类号 |
G09F9/30;H01L21/00;H01L27/32;H01L29/04;H01L51/50;H01L51/52;H01L51/56;H05B33/10;H05B33/12;H05B33/22 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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