发明名称 Light emitting device and manufacturing method thereof
摘要 In a light emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a structure of a light-emitting device that can make the foregoing planarization easier. The same layer as a wiring formed on a first film is used to manufacture a second film. Herewith, a portion of the first film below a light-emitting element can be prevented from being etched to form unevenness at a surface of the first film during the formation of the wiring. In addition, a surface of a third film is made higher by providing the second film to enable local planarization.
申请公布号 US2008032430(A1) 申请公布日期 2008.02.07
申请号 US20070896822 申请日期 2007.09.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MURAKAMI SATOSHI;MIYAGI NORIKO
分类号 G09F9/30;H01L21/00;H01L27/32;H01L29/04;H01L51/50;H01L51/52;H01L51/56;H05B33/10;H05B33/12;H05B33/22 主分类号 G09F9/30
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