| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing electrical connection between adjacent floating gate electrodes, and its manufacturing method. SOLUTION: The height of a polysilicon layer 4 is formed to be lower than before to be about 95[nm], and when etching a NONON film 5, a polysilazane film 15b and a silicone oxide film 15a, etching treatment is performed under such a prescribed condition that a selection ratio condition between the polysilicon layer 4 and the NONON film 5 is in a range of 1:1.5 to 2. COPYRIGHT: (C)2008,JPO&INPIT
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