发明名称 |
GAS SUPPLY DEVICE, GAS SUPPLY METHOD, CLEANING METHOD FOR THIN-FILM FORMING DEVICE, THIN-FILM FORMING METHOD, AND THIN-FILM FORMING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a gas supply device, a gas supply method, a cleaning method for a thin-film forming device, a thin-film forming method, and a thin-film forming device that enable to suppress deterioration of components. SOLUTION: A hydrogen introduction pipe 17d has an internal channel 174 and an external channel 175 formed so as to cover the internal channel 174. Hydrogen is supplied through the internal channel 174 while nitrogen is supplied through the external channel 175. Consequently, hydrogen supplied through the internal channel 174 is supplied through the hydrogen introduction pipe 17d while its periphery is being covered with nitrogen. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008098431(A) |
申请公布日期 |
2008.04.24 |
申请号 |
JP20060278906 |
申请日期 |
2006.10.12 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
NAKAO MASARU;KATO HISASHI;OKABE YASUYUKI;OKADA MITSUHIRO;HONMA MANABU;HAISHI TOMOKI |
分类号 |
H01L21/31;C23C16/44;H01L21/3065 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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