发明名称 GAS SUPPLY DEVICE, GAS SUPPLY METHOD, CLEANING METHOD FOR THIN-FILM FORMING DEVICE, THIN-FILM FORMING METHOD, AND THIN-FILM FORMING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a gas supply device, a gas supply method, a cleaning method for a thin-film forming device, a thin-film forming method, and a thin-film forming device that enable to suppress deterioration of components. SOLUTION: A hydrogen introduction pipe 17d has an internal channel 174 and an external channel 175 formed so as to cover the internal channel 174. Hydrogen is supplied through the internal channel 174 while nitrogen is supplied through the external channel 175. Consequently, hydrogen supplied through the internal channel 174 is supplied through the hydrogen introduction pipe 17d while its periphery is being covered with nitrogen. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008098431(A) 申请公布日期 2008.04.24
申请号 JP20060278906 申请日期 2006.10.12
申请人 TOKYO ELECTRON LTD 发明人 NAKAO MASARU;KATO HISASHI;OKABE YASUYUKI;OKADA MITSUHIRO;HONMA MANABU;HAISHI TOMOKI
分类号 H01L21/31;C23C16/44;H01L21/3065 主分类号 H01L21/31
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