| 摘要 |
A thin film transistor array substrate comprises a thin film transistor (106) including a gate insulating layer, a semiconductor layer, an ohmic contact layer (150), and a source electrode (110) and a drain electrode (112), where the gate insulating layer includes a gate insulating pattern (146) underlying a data line (104) and a transparent electrode material, and covering a gate line (102). A thin film transistor array substrate comprises a gate line formed on a substrate; a data line formed on the substrate intersecting with the gate line to define a pixel region; a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including gate electrode (108) formed on the substrate, a gate insulating layer formed on the gate electrode and the substrate, a semiconductor layer formed on the gate insulating layer, an ohmic contact layer on the semiconductor layer, and a source electrode and a drain electrode on the ohmic contact layer; and a transparent electrode material within the pixel region and connected to the drain electrode of the thin film transistor, where the gate insulating layer includes a gate insulating pattern underlying the data line and the transparent electrode material, and covering the gate line. An INDEPENDENT CLAIM is also included for a method of fabricating a thin film transistor array substrate, comprising forming a first conductive pattern group including a gate line, a gate pad (126), and a gate electrode of a thin film transistor, the thin film transistor connected to the gate line on a substrate; forming a gate insulating film on the substrate including the first conductive pattern group; forming a second conductive pattern group including a data line intersecting the gate line, a source electrode of the thin film transistor connected to the data line, and a drain electrode of the thin film transistor, an ohmic contact layer, and a semiconductor layer for forming a channel region of the thin film transistor; forming a third conductive pattern group including a transparent electrode material connected to the drain electrode; and etching the gate insulating film and the ohmic contact layer using the second and third conductive pattern groups as a mask. |
