| 摘要 |
PROBLEM TO BE SOLVED: To reduce variation in TFTs and also cut down a number of masks, reduce the number of production processes and shorten periods of production processes, when manufacturing a semiconductor device having an N-type thin-film transistor and a P-type thin-film transistor. SOLUTION: The method of manufacturing a semiconductor device includes a process of forming an island-shaped semiconductor layer of a first thin-film transistor and thereafter, forming an island-shaped semiconductor layer of a second thin-film transistor, in which, when the island-shaped semiconductor layer of the second thin-film transistor is formed, a gate insulating film, in contact with the island-shaped semiconductor layer of the second thin-film transistor, is also used as a protective film (etching stopper film) for the island-shaped semiconductor layer of the first thin-film transistor. COPYRIGHT: (C)2008,JPO&INPIT |
