| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for enhancing the reliability of a semiconductor device to attain high performance by employing a laminate structure having adequate barrier performance with respect to copper, reducing the delay time of a wiring, by reducing electric capacitance between wirings and having improved bondability among the wirings. SOLUTION: In the semiconductor device having a copper wiring layer, the semiconductor device has at least a laminate structure, having a copper wiring, a barrier layer, a silicon oxide-based porous insulating layer having direct contact with the barrier layer; a barrier layer having direct contact with the silicon-based porous insulating layer and a copper layer in this order, wherein at least one of the barrier layers is an amorphous carbon film having≥2.4 g/cm<SP>3</SP>density; and a silicon-based insulating layer, having direct contact with the amorphous carbon film and the copper wiring provided between them. COPYRIGHT: (C)2008,JPO&INPIT |
