| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve ON-state voltage.SOLUTION: A semiconductor device according to the present embodiment comprises: a first insulation layer having a first side wall; an oxide semiconductor arranged on the first side wall; a gate insulation layer arranged on the oxide semiconductor on the side opposite to the first side wall; a gate electrode arranged via the gate insulation layer and opposite to the oxide semiconductor arranged on the first side wall; a first electrode which is arranged below the oxide semiconductor and connected to one side of the oxide semiconductor; and a second electrode which is arranged above the oxide semiconductor and connected to the other end of the oxide semiconductor.SELECTED DRAWING: Figure 1 |
