| 发明名称 | Semiconductor memory device | ||
| 摘要 | The inventive concepts provide a semiconductor memory device including variable resistance memory elements. The semiconductor memory device may include a first bit line disposed at a first height from a semiconductor substrate, a second bit line disposed at a second height, which is different from the first height, from the semiconductor substrate, a first variable resistance memory element connected to the first bit line, and a second variable resistance memory element connected to the second bit line. The first and second variable resistance memory elements may be disposed at substantially the same height from the semiconductor substrate. | ||
| 申请公布号 | US9401385(B2) | 申请公布日期 | 2016.07.26 |
| 申请号 | US201514639183 | 申请日期 | 2015.03.05 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Seo Boyoung;Lee Yongkyu;Chun Keemoon |
| 分类号 | H01L29/66;H01L29/82;H01L27/22;H01L43/02;H01L43/08;G11C11/16 | 主分类号 | H01L29/66 |
| 代理机构 | Myers Bigel & Sibley, P.A. | 代理人 | Myers Bigel & Sibley, P.A. |
| 主权项 | 1. A semiconductor memory device comprising: a first bit line that is at a first height from a semiconductor substrate; a second bit line that is at a second height from the semiconductor substrate, the second height different from the first height; a first variable resistance memory element that is connected to the first bit line and that is at a third height from the semiconductor substrate; and a second variable resistance memory element that is connected to the second bit line and that is substantially at the third height. | ||
| 地址 | KR | ||