Structure and formation method of FinFET device

摘要

Structures and formation methods of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure and a source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device structure further includes an isolation layer between the source/drain structure and the semiconductor substrate.

主权项

1. A semiconductor device structure, comprising:
a semiconductor substrate; a fin structure over the semiconductor substrate; a gate stack covering a portion of the fin structure; a source/drain structure over the fin structure and adjacent to the gate stack; and an isolation layer between the source/drain structure and the semiconductor substrate, wherein the isolation layer is directly under the source/drain structure.