Semiconductor device, solid-state image sensor, methods of manufacturing the same, and camera

摘要

A method of manufacturing a semiconductor device includes forming a silicon compound layer containing nitrogen on a substrate where a silicide layer and an element isolating portion have been formed, forming an opening in the silicon compound layer, and forming an interlayer insulating film which covers the silicon compound layer and the opening. The opening is formed to lie within an area of the silicon compound layer that overlaps the element isolating portion.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a silicon compound layer containing nitrogen on a substrate where a silicide layer and an element isolating portion have been formed; forming an opening in the silicon compound layer so that the opening is arranged over only the element isolating portion; and forming an interlayer insulating film which covers the silicon compound layer and the opening, wherein the interlayer insulating film contacts the element isolating portion.