发明名称 Wiring substrate and method of manufacturing the same
摘要 A wiring substrate includes a first wiring layer including a first wiring part having a first wiring interval and a second wiring part having a second wiring interval wider than the first wiring interval, a metal plane layer formed on a portion of a first insulation layer formed on the first wiring layer, the first wiring part being located below the portion, a second insulation layer formed on the first insulation layer and the metal plane layer and having a first via hole and a second via hole, a second wiring layer formed on the second insulation layer and connected to the first wiring layer via a first via conductor formed in the first via hole, and a third wiring layer formed on the second insulation layer and connected to the metal plane layer via a second via conductor formed in the second via hole.
申请公布号 US9412687(B2) 申请公布日期 2016.08.09
申请号 US201514734395 申请日期 2015.06.09
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 Kunimoto Yuji;Furuichi Jun;Shimizu Noriyoshi;Koizumi Naoyuki
分类号 H05K1/11;H01L23/498;H05K3/00;H05K3/46;H05K3/42 主分类号 H05K1/11
代理机构 Rankin, Hill & Clark LLP 代理人 Rankin, Hill & Clark LLP
主权项 1. A wiring substrate, comprising: a first wiring layer including a first wiring part having a first wiring interval and a second wiring part having a second wiring interval wider than the first wiring interval; a first insulation layer formed on the first wiring layer; a metal plane layer formed on a portion of the first insulation layer, the first wiring part being located below the portion; a second insulation layer formed on the first insulation layer and the metal plane layer; a first via hole extending from an upper surface of the second insulation layer to the first wiring layer; a first via conductor formed in the first via hole; a second via hole formed in the second insulation layer and reaching the metal plane layer; a second via conductor formed in the second via hole; a second wiring layer formed on the second insulation layer and connected to the first wiring layer via the first via conductor; a third wiring layer formed on the second insulation layer and connected to the metal plane layer via the second via conductor; a first multi-layered wiring layer; and a second multi-layered wiring layer formed on the first multi-layered wiring layer and having a wiring pitch narrower than the first multi-layered wiring layer, and wherein the second multi-layered wiring layer comprises the first wiring layer, the metal plane layer, the second wiring layer and the third wiring layer.
地址 Nagano-Shi JP