Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

摘要

Impurity atoms of a first type are implanted through a gate and a thin gate dielectric into a channel region that has substantially only the first type of impurity atoms at a middle point of the channel region to increase the average dopant concentration of the first type of impurity atoms in the channel region to adjust the threshold voltage of a transistor.

主权项

1. A method of forming a semiconductor structure comprising:
implanting a first type of impurity atoms into a substrate to simultaneously form a first core well, a first I/O source extension well, a first I/O drain extension well, and a first I/O well; implanting a second type of impurity atoms into the substrate to simultaneously form a second core well, a second I/O well, a second I/O source extension well, and a second I/O drain extension well, the second I/O well touching the first I/O source extension well and the first I/O drain extension well, the second I/O source extension well and the second I/O drain extension well touching the first I/O well; implanting the first type of impurity atoms into the second core well to simultaneously form a first core source extension region and a first core drain extension region; implanting the second type of impurity atoms into the first core well to simultaneously form a second core source extension region and a second core drain extension region; and simultaneously implanting the first type of impurity atoms into:
the first core source extension region to form a first core main source region;the first core drain extension region to form a first core main drain region;the first I/O source extension well to form a first I/O main source region; andthe first I/O drain extension well to form a first I/O main drain region.