Semiconductor device and method of fabricating the same

摘要

A semiconductor device and a method for manufacturing the same are capable of improving GIDL in a buried gate, and preventing degradation of device characteristics and reliability due to reduction in gate resistance. The semiconductor device may include: junction regions formed at both sidewalls of a trench formed in a semiconductor substrate; a first gate electrode formed in a lower portion of the trench; a second gate electrode formed on at least one inner sidewall of the trench which overlaps one of the junction regions on the first gate electrode; and a third gate electrode formed on one side of the second gate electrode on the first gate electrode.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
etching a gate region of a semiconductor substrate to form a trench; forming a first gate material layer filling the trench; etching the first gate material layer, to form a first gate electrode, to a depth at which the first gate electrode does not overlap with junction regions of the semiconductor substrate; forming a second gate electrode over at least one inner sidewall of the trench and over the first gate electrode; and forming a third gate electrode in the trench over one side of the second gate electrode and over the first gate electrode, wherein the second gate electrode is electrically coupled to the first gate electrode.