Method of manufacturing a SiOCN film, substrate processing apparatus, and recording medium

摘要

A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times after supplying a nitriding gas to the substrate. The cycle includes performing the following steps in the following order: supplying a carbon-containing gas to the substrate; supplying a predetermined element-containing gas to the substrate; supplying the carbon-containing gas to the substrate; supplying an oxidizing gas to the substrate; and supplying the nitriding gas to the substrate.

主权项

1. A method of manufacturing a semiconductor device, comprising forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle comprising performing the following under a non-plasma atmosphere in the following order:
(a) supplying a carbon-containing gas to the substrate; (b) supplying a predetermined element-containing gas to the substrate; (c) supplying a carbon-containing gas to the substrate; (d) supplying an oxidizing gas to the substrate; and (e) supplying a nitriding gas to the substrate, wherein in the (a), a first carbon-containing layer is formed directly on a portion of an uppermost surface of the substrate, wherein in the (b), a predetermined element-containing layer is formed directly on the uppermost surface of the substrate, which has the first carbon-containing layer formed on the portion thereof, wherein in the (c), a second carbon-containing layer is formed directly on a portion of a surface of the predetermined element-containing layer.