Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device

摘要

A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.

主权项

1. A reaction tube for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein, comprising:
an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened; and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit and the second exhaust slit being formed in a lateral surface of the inner tube, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in an insulating region lower than the substrate arrangement region, and wherein the second exhaust slit has an opening area smaller than that of the first exhaust slit.