发明名称 |
Vortex diodes as effluent treatment devices |
摘要 |
The present invention discloses device that can generate a strong vortex in the vortex chamber which significantly enhances rate of reactions and effectiveness of waste water treatment. The present invention disclose vortex diodes with or without inserts/stabilizers as continuous flow reactors to induce cavitation to generate radicals which reduces Chemical Oxygen Demand (COD), ammoniacal nitrogen and color of waste water effectively in effluent treatments. |
申请公布号 |
US9422952(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201214351124 |
申请日期 |
2012.10.11 |
申请人 |
COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCH |
发明人 |
Ranade Vivek Vinayak;Kulkarni Amol Arvind;Bhandari Vinay Manoharrao |
分类号 |
C02F1/72;F15D1/00;C02F1/34;C02F3/28;C02F9/00;F15C1/16;C02F1/52;C02F1/78;C02F3/02;C02F101/30;C02F103/28;C02F103/30;C02F103/32 |
主分类号 |
C02F1/72 |
代理机构 |
Knobbe, Martens, Olson & Bear, LLP |
代理人 |
Knobbe, Martens, Olson & Bear, LLP |
主权项 |
1. A vortex diode for effluent treatment, wherein said vortex diode comprises:
i. a chamber provided with a single or multiple inlet as a tangential port, wherein a flow entering from the tangential port sets up a high resistance mode of operation; ii. a vortex stabilizer connected to the chamber, wherein said vortex stabilizer comprises a base with or without threads and an insert which lies within the chamber; the insert being symmetrical around axis of an axial port and being formed by revolving either a straight connecting line having slope or a curved line between a point on the axis of symmetry of the chamber and a point lying on the base opposite to the axial port; and iii. the axial port being provided in the chamber for discharging treated effluent water; wherein the vortex stabilizer has a diameter in a range of 10 to 40% of a diameter of the chamber and a height less than 15% of the diameter of the chamber. |
地址 |
New Delhi IN |